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| FZT688B_15 Datasheet, PDF (1/2 Pages) Diodes Incorporated – SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | |||
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SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
FZT688B
ISSUE 3 - OCTOBER 1995
FEATURES
* Extremely low equivalent on resistance; RCE(sat) 83m⦠at 3A
* Gain of 400 at IC=3 Amps and very low saturation voltage
C
APPLICATIONS
* Flash gun convertors & Battery powered circuits
E
PARTMARKING DETAIL Â FZT688B
COMPLEMENTARY TYPE - FZT788B
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX.
12
V
12
V
5
V
10
A
4
A
2
W
-55 to +150
°C
UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
V(BR)CBO 12
V(BR)CEO 12
V(BR)EBO 5
ICBO
IEBO
VCE(sat)
Base-Emitter SaturationVoltage VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer hFE
500
Ratio
400
100
Transition Frequency
fT
150
0.1
0.1
0.04
0.06
0.18
0.35
0.40
1.1
1.0
V
V
V
µA
µA
V
V
V
V
V
V
V
MHz
IC=100µA
IC=10mA*
IE=100µA
VCB=10V
VEB=4V
IC=0.1A, IB=1mA
IC=0.1A,IB=0.5mA*
IC=1A, IB=50mA*
IC=3A, IB=20mA*
IC=4A, IB=50mA*
IC=3A, IB=20mA*
IC=3A, VCE=2V
IC=0.1A, VCE=2V*
IC=3A, VCE=2V*
IC=10A, VCE=2V*
IC=50mA,VCE=5V
f=50MHz
Input Capacitance
Cibo
200
pF
Output Capacitance
Cobo
40
pF
Switching Times
ton
40
ns
toff
500
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
VEB=0.5Vf=1MHz
VCB=10V,f=1MHz
IC=500mA, IB1=50A
IB2=50mA, VCC=10V
3 - 217
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