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| FZT655 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR | |||
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SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3Â FEBRUARY 1995
7
FEATURES
* Low saturation voltage
COMPLEMENTARY TYPE Â FZT755
PARTMARKING DETAIL Â FZT655
FZT655
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
150
V
150
V
5
V
2
A
1
A
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 150
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 150
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V
IE=100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
0.1
µA
VCB=125V
0.1
µA
VEB=3V
0.5
V
0.5
V
IC=500mA, IB=50mA*
IC=1A, IB=200mA*
1.1
V
IC=500mA, IB=50mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.0
V
IC=500mA, VCE =5V*
Static Forward Current hFE
50
Transfer Ratio
50
20
Transition Frequency
fT
30
IC=10mA, VCE =5V*
300
IC=500mA, VCE =5V*
IC=1A, VCE =5V*
MHz
IC=10mA, VCE =20V
f=20MHz
Output Capacitance
Cobo
20
pF
VCB =10V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle â¤2%
3 - 211
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