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| FZT653TA Datasheet, PDF (1/2 Pages) Diodes Incorporated – SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR | |||
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SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3Â FEBRUARY 1995
FEATURES
* Low saturation voltage
FZT653
C
COMPLEMENTARY TYPE Â FZT753
PARTMARKING DETAIL Â FZT653
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
6
A
Continuous Collector Current
IC
2
A
Power Dissipation at Tamb =25°C
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 120
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 100
V
IC=10mA*
Emitter-Base Breakdown V(BR)EBO 5
Voltage
V
IE=100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
IEBO
VCE(sat)
VBE(sat)
0.1
µA
10
µA
0.1
µA
0.13 0.3
V
0.23 0.5
V
0.9
1.25 V
VCB=100V
VCB=100V,Tamb=100°C
VEB=4V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=1A, IB=100mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.8
1.0
V
IC=1A, VCE =2V*
Static Forward Current hFE
Transfer Ratio
Transition Frequency
fT
70
200
100 200 300
55
110
25
55
IC=50mA, VCE =2V*
IC=500mA, VCE=2V*
IC=1A, VCE =2V*
IC=2A, VCE =2V*
140 175
MHz
IC=100mA, VCE =5V
f=100MHz
Output Capacitance
Switching Times
Cobo
ton
toff
30
pF
VCB=10V, f=1MHz
80
1200
ns
IC=500mA, VCC =10V
ns
IB1=IB2=50mA
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
3 - 209
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