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| FZT589 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR | |||
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SOT223 PNP SILICON PLANAR MEDIUM POWER
HIGH PERFORMANCE TRANSISTOR
ISSUE 2 - OCTOBER 1995
PARTMARKING DETAILS - FZT589
COMPLEMENTARY TYPES - FZT489
FZT589
C
E
ABSOLUTE MAXIMUM RATINGS.
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Base Current
IB
-200
mA
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -50
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -30
V
IC=-1mÎâ
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=-100µA
Collector Cut-Off Current
Collector Emitter Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
ICBO
ICES
IEBO
VCE(sat)
VBE(sat)
-100 nA
-100 nA
-100 nA
-0.35 V
-0.65
-1.2 V
VCB=-30V
VCES =-30V
VEB=-4V
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-1A, IB=-100mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-1.1 V
IC=-1A, VCE=-2V*
Static Forward
Current Transfer Ratio
Transition Frequency
hFE
100
100 300
80
40
IC=-1mA, VCE=-2V*
IC=-500mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
fT
100
MHz
IC=-100mA, VCE=-5V
f=100MHz
Output Capacitance
Cobo
15
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
For typical characteristics graphs see FMMT549 datasheet
VCB=-10V, f=1MHz
3 - 194
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