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| FZT560 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 1â NOVEMBER 1998
FEATURES
* 500 Volt VCEO
* 150mA continuous current
* Ptot = 2 Watt
PARTMARKING DETAIL â FZT560
FZT560
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-500
V
Collector-Emitter Voltage
VCEO
-500
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-500
mA
Continuous Collector Current
IC
-150
mA
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -500
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
VCEO(SUS) -500
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-5
V
IE=-100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
ICBO
ICES
IEBO
VCE(sat)
VBE(sat)
-100 nA
-100 nA
-100 nA
-0.20 V
-0.5 V
-0.9 V
VCB=-500V
VCE=-500V
VEB=-5V
IC=-20mA, IB=-2mA
IC=-50mA, IB=-10mA*
IC=-50mA, IB=-10mA*
Base-Emitter Turn On Voltage
Static Forward Current
Transfer Ratio
VBE(on)
hFE
Transition Frequency
fT
-0.9
100 300
80
300
15 typ
60
V
MHz
IC=-50mA, VCE=-10V*
IC=-1mA, VCE=-10V
IC=-50mA, VCE=-10V*
IC=-100mA, VCE=-10V*
IC=-10mA, VCE=-20V
f=50MHz
Output Capacitance
Switching times
Cobo
ton
toff
8
110 typ.
1.5 typ
pF
VCB=-20, f=1MHz
ns
VCE=-100, IC=-50mA,
µs
IB1=-5mA,IB2=10mA,
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
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