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| FZT549 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 Â MARCH 1995
7
PARTMARKING DETAIL Â FZT549
FZT549
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
-35
V
-30
V
-5
V
-2
A
-1
A
2
W
-55 to +150
°C
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -35
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -30
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=-100µA
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
VBE(sat)
-0.1 µA
-10
µA
-0.1 µA
-0.50 V
-0.75 V
-1.25 V
VCB=-30V
VCB=-30V, Tamb=100°C
VEB=-4V
IC=-1A, IB =-100mA*
IC=-2A, IB -200mA*
IC=-1A, IB=-100mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-1.0 V
IC =-1A, VCE =-2V*
Static Forward Current hFE
70
100
80
30
Transition Frequency
fT
100
IC=-50mA, VCE =-2V
300
IC =-500mA, VCE =-2V*
IC =-1A, VCE =-2V*
IC =-2A, VCE =-2V*
MHz
IC=-100mA, VCE=-5V,
f =100MHz
Output Capacitance
Cobo
10
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
For typical characteristics graphs see FMMT549 datasheet.
VCB=-10V, f=1MHz
3 - 191
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