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| FZT493 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 Â NOVEMBER 1995 7
FZT493
C
COMPLEMENTARY TYPE Â FZT593
E
PARTMARKING DETAIL Â FZT493
ABSOLUTE MAXIMUM RATINGS.
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
120
V
100
V
5
V
2
A
1
A
200
mA
2
W
-55 to +150
°C
UNIT CONDITIONS.
Breakdown Voltages
Cut-Off Currents
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V(BR)CBO 120
V(BR)CEO 100
V(BR)EBO
5
ICBO
IEBO
ICES
VCE(sat)
VBE(sat)
V
V
V
100 nA
100 nA
100 nA
0.3
V
0.6
V
1.15 V
IC=100µA
IC=10mA*
IE=100µA
VCB=100V
VEB=4V
VCES=100V
IC=500mA, IB =50mA*
IC=1A, IB =100mA*
IC=1A, IB=100mA*
Base-Emitter Turn-On
Voltage
VBE(on)
1.0
V
IC =1A, VCE =10V*
Static Forward Current hFE
100
100
80
30
Transition Frequency
fT
150
IC=1mA, VCE =10V
300
IC =250mA, VCE =10V*
IC =500mA, VCE =10V*
IC = 1A, VCE =10V*
MHz
IC=50mA, VCE=10V,
f =100MHz
Output Capacitance
Cobo
10
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
For typical Characteristics graphs see FMMT493 datasheet
VCB=10V, f=1MHz
3 - 190
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