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| FZT491 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
7
FZT491
C
COMPLEMENTARY TYPE Â FZT591
PARTMARKING DETAIL Â FZT491
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
Breakdown Voltage
V(BR)CBO 80
V(BR)CEO 60
V(BR)EBO
5
Collector Cut-Off
ICBO
100
Current
Emitter Cut-Off Current IEBO
100
Collector-Emitter Cut-Off ICES
100
Current
Collector-Emitter
VCE(sat)
0.25
Saturation Voltage
0.5
Base-Emitter
VBE(sat)
1.1
Saturation Voltage
Base-Emitter Turn-On VBE(on)
1.0
Voltage
Static Forward Current hFE
100
100
300
80
30
Transition Frequency
fT
150
Output Capacitance
Cobo
10
*Measured under pulsed conditions. Pulse width=300µs.
For typical characteristics graphs see FMMT491 datasheet
E
C
B
VALUE
80
60
5
2
1
200
2
-55 to +150
UNIT
V
V
V
A
A
mA
W
°C
UNIT
V
V
V
nA
CONDITIONS.
IC=100µA
IC=10mA*
IE=100µA
VCB=60V
nA
VEB=4V
nA
VCES=60V
V
IC=500mA, IB =50mA*
V
IC=1A, IB =100mA*
V
IC=1A, IB=100mA*
V
IC =1A, VCE =5V*
MHz
pF
IC=1mA, VCE =5V
IC =500mA, VCE =5V*
IC =1A, VCE =5V*
IC = 2A, VCE =5V*
IC=50mA, VCE=10V,
f =100MHz
VCB=10V, f=1MHz
3 - 189
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