FZT1147A_15 Datasheet, PDF (1/4 Pages) Diodes Incorporated – PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FZT1147A
FEATURES
* V_CEO = -12V
* 5 Amp Continuous Current
* 20 Amp Pulse Current
* Low Saturation Voltage
* High Gain
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T_amb=25°C †
Operating and Storage Temperature
Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
P_tot
T_j:T_stg
C
VALUE
-15
-12
-5
-20
-5
-500
2.5
-55 to +150
E
C
B
SOT223
UNIT
V
V
V
A
A
mA
W
°C
†The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches by 2 inches