FZT1047A_15 Datasheet, PDF (1/4 Pages) Diodes Incorporated – SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

SOT223 NPN SILICON PLANAR
MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 1 - AUGUST 1997
FEATURES
* V_CEO = 10V
* 5 Amp Continuous Current
* 20 Amp Pulse Current
* Low Saturation Voltage
* High Gain
* Extremely Low Equivalent On-resistance; R_CE(sat) = 44mΩ at 5A
FZT1047A
C
B
SOT223
E
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature
Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
P_tot
T_j:T_stg
VALUE
35
10
5
20
5
500
2.5
-55 to +150
UNIT
V
V
V
A
A
mA
W
°C