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| FMMV105G Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SILICON PLANAR VARIABLE CAPACITANCE DIODE | |||
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SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE
ISSUE 4 â JANUARY 1998
PIN CONFIGURATION
1
PARTMARKING DETAILS
FMMV105G â 4EZ
FMMV105G
2
1
3
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
Ptot
Tj:Tstg
VALUE
330
-55 to +150
UNIT
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown VBR
30
Voltage
V
IR = 10µA
Reverse current
IR
Series Inductance
LS
Diode Capacitance
TCC
Temperature
Coefficient
10
3.0
280
nA
VR = 28V
nH
f=250MHz
ppm/ °C VR = 3V, f=1MHz
TUNING CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Diode Capacitance
Capacitance Ratio
Figure of MERIT
Cd
1.8
2.8
pF
Cd / Cd
4.0
6.0
Q
250 350
VR = 25V, f=1MHz
VR = 3V/25V, f=1MHz
VR = 3V, f=50MHz
Spice parameter data is available upon request for this device
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