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| FMMTA92 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 - MARCH 2001
âª
PARTMARKING DETAILS: â FMMTA92 - 4E
â FMMTA92R - 8E
FMMTA92
E
C
B
COMPLEMENTARY TYPES: â FMMTA92 - FMMTA42
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL FMMTA92
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation at Tamb = 25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
FMMTA92
-300
V
-300
V
-5
V
-200
mA
330
mW
-55 to +150
°C
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -300
V
IC=-100µA, IE=0
Collector-Emitter Breakdown
Voltage
V(BR)CEO -300
V
IC=-1mA, IB=0*
Emitter-Base Breakdown
Voltage
V(BR)EBO -5
V
IE=-100µA, IC=0
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
ICBO
IEBO
VCE(sat)
-0.25 µA
µA
-0.1 µA
-0.5 V
VCB=-200V, IE=0
VCB=-160V, IE=0-
VEB=-3V, IE=0
IC=-20mA, IB=-2mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9 V
IC=-20mA, IB=-2mA*
Static Forward Current
Transfer Ratio
Transition Frequency
hFE
25
40
25
fT
50
MHz
IC=-1mA, VCE=10V*
IC=-10mA, VCE=10V*
IC=-30mA,VCE=-10V*
IC=-10mA, VCE=-20V
f=20MHz
Output Capacitance
Cobo
6
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
VCB=-20V, f=1MHz
TBA
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