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| FMMTA56_15 Datasheet, PDF (1/1 Pages) Diodes Incorporated – SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS | |||
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SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 â MARCH 2001
âª
FEATURES
* Gain of 50 at IC=100mA
PARTMARKING DETAIL -
FMMTA56 - 2G
FMMTA56R - MB
FMMTA56
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
SOT23
FMMTA56
-80
-80
-4
-500
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
FMMTA56
PARAMETER
SYMBOL MIN. MAX.
Collector-Emitter Breakdown
Voltage
V(BR)CEO -80
Emitter-Base Breakdown
Voltage
V(BR)EBO -4
Collector-Emitter Cut-Off
ICES
-0.1
Current
Collector-Base Cut-Off Current ICBO
-0.1
UNIT
V
V
µA
µA
Static Forward Current Transfer hFE
50
Ratio
50
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.25 V
Base-Emitter
Turn-On Voltage
VBE(on)
-1.2 V
Transition
Frequency
fT
100
MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
CONDITIONS.
IC=-1mA, IB=0*
IE=-100µA, IC=0
VCE=-60V
VCB=-80V, IE=0
VCB=-60V, IE=0
IC=-10mA, VCE=1V*
IC=-100mA, VCE=1V*
IC=-100mA, IB=-10mA*
IC=-100mA, VCE=-1V*
IC=-10mA, VCE=-2V
f=100MHz
TBA
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