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| FMMTA42 Datasheet, PDF (1/4 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS | |||
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FMMTA42
SOT23 NPN Silicon planar high voltage transistor
Device marking
FMMTA42 - 3E
Complementary types
FMMTA92
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Power dissipation at Tamb=25°C
Operating and storage temperature range
Electrical characteristics (at Tamb = 25°C).
Parameter
Symbol Min.
Collector-base breakdown V(BR)CBO 300
voltage
Collector-emitter breakdown V(BR)CEO 300
voltage
Emitter-base breakdown
V(BR)EBO
6
voltage
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation VCE(sat)
voltage
Base-emitter saturation
voltage
VBE(sat)
Static forward
current transfer
ratio
hFE
25
40
40
Transition frequency
fT
50
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
Max.
0.1
0.1
0.5
0.9
Unit
V
V
V
µA
µA
µA
µA
V
V
MHz
Output capacitance
Cobo
6
pF
NOTES:
(*) Measured under pulsed conditions. Pulse width ⤠300µs; duty cycle ⤠2%.
FMMTA42
300
300
5
200
330
-55 to +150
Unit
V
V
V
mA
mW
°C
Conditions
IC=100µA, IE=0
IC=1mA, IB=0 (*)
IE=100µA, IC=0
VCB=200V, IE=0
VCB=160V, IE=0
VEB=6V, IC=0
VEB=4V, IC=0
IC=20mA, IB=2mA(*)
IC=20mA, IB=2mA(*)
IC=1mA, VCE=10V(*)
IC=10mA, VCE=10V(*)
IC=30mA, VCE=10V(*)
IC=10mA, VCE=20V
f=20MHz
VCB=20V, f=1MHz
Issue 6 - December 2007
1
© Zetex Semiconductors plc 2007
www.zetex.com
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