FMMT723TA Datasheet, PDF (1/4 Pages) Diodes Incorporated – SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS

SuperSOT
SOT23 PNP SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 JUNE 1996
FEATURES
* 625mW POWER DISSIPATION
* I_C CONT 2.5A
* I_C Up To 10A Peak Pulse Current
* Excellent h_fe Characteristics Up To 10A (pulsed)
* Extremely Low Saturation Voltage E.g. 10mV Typ.
* Exhibits extremely low equivalent on-resistance; R_CE(sat)
FMMT717 FMMT718
FMMT720 FMMT722
FMMT723
E
C
B
DEVICE TYPE
FMMT717
FMMT718
FMMT720
FMMT722
FMMT723
COMPLEMENT
FMMT617
FMMT618
FMMT619
–
FMMT624
PARTMARKING
717
718
720
722
723
R_CE(sat)
72mΩ at 2.5A
97mΩ at 1.5A
163mΩ at 1.5A
-
-
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
FMMT FMMT FMMT FMMT FMMT
717 718 720 722 723 UNIT
Collector-Base Voltage
V_CBO
-12
-20
-40
-70 -100
V
Collector-Emitter Voltage
V_CEO
-12
-20
-40
-70 -100
V
Emitter-Base Voltage
V_EBO
-5
-5
-5
-5
-5
V
Peak Pulse Current**
I_CM
-10
-6
-4
-3
-2.5
A
Continuous Collector Current
I_C
-2.5 -1.5 -1.5 -1.5
-1
A
Base Current
I_B
-500
mA
Power Dissipation at T_amb=25°C* P_tot
625
mW
Operating and Storage
Temperature Range
T_j:T_stg
-55 to +150
°C
*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
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