FMMT591A Datasheet, PDF (1/4 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

A Product Line of
Diodes Incorporated
FMMT591A
SOT23 PNP silicon planar medium power transistor
Features
Low equivalent on resistance R_CE(sat) = 350m⍀ at 1A
Part Marking Detail -91A
Complementary type -FMMT491A
Absolute maximum ratings.
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Peak pulse current
Continuous Collector current
Base current
Power dissipation at Tamb=25oC
Operating an storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
P_tot
T_j ; T_STG
Value
Unit
-40
V
-40
V
-5
V
-2
A
-1
A
-200
mA
500
mW
-55 to +150 _°C
Electrical characteristics (at T_amb = 25°C)
Parameter
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-Emitter cut-off current
Collector-Emitter saturation voltage
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
I_CES
V_CE(sat)
Min
-40
-40
-5
Base-Emitter saturation voltage
Base-Emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
V_BE(sat)
V_BE(on)
h_FE
300
300
250
160
30
f_T
150
C_obo
Max
-100
-100
-100
-0.2
-0.35
-0.5
-1.1
-1.0
800
10
Unit
V
V
V
nA
nA
nA
V
V
V
V
V
MHz
pF
Conditions
I_C=-100␮A
I_C=-10mA ^(*)
I_E=-100␮A
V_CB=-30V
V_EB=-4V
V_CES=-30V
I_C=-100mA, I_B=-1mA^(*)
I_C=-500mA, I_B=-20mA^(*)
I_C=-1A, I_B=-100mA^(*)
I_C=-1A, I_B=-50mA^(*)
I_C=-1A, V_CE=-5V^(*)
I_C=-1mA,
I_C=-100mA^(*)
I_C=-500mA^(*), V_CE=-5V
I_C=-1A^(*)
I_C=-2A^(*)
I_C=-50mA, V_CE=-10V
f=100MHz
V_CB=-10V, f=1MHz
NOTES:
(*) Measured under pulse conditions. Pulse width=300␮s. Duty cycle 2%
Issue 4 - August 2008
1
© Diodes Incorporated, 2008
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