FMMT560 Datasheet, PDF (1/4 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

A Product Line of
Diodes Incorporated
FMMT560
PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
Features
Mechanical Data
• Excellent h_FE Characteristics up to I_C = 50mA
• Low Saturation Voltages
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Matte Tin Finish annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
C
C
B
Top View
B
E
E
Pin Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
Value
-500
-500
-5
-150
-500
Unit
V
V
V
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation
Operating and Storage Temperature Range
Symbol
P_D
T_J, T_STG
Value
500
-55 to +150
Unit
mW
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 3)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Turn-Off Time
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO; I_CES
I_EBO
h_FE
V_CE(SAT)
V_BE(ON)
V_BE(SAT)
C_obo
f_T
t_on
t_off
Min
-500
-500
-5
⎯
⎯
100
80
⎯
⎯
⎯
⎯
⎯
60
⎯
⎯
Typ
Max
Unit
Test Condition
⎯
⎯
V
I_C = -100μA
⎯
⎯
V
I_C = -10mA
⎯
⎯
V
I_E = 100μA
⎯
-100
nA V_CB = -500V, V_CE = -500V
⎯
-100
nA V_EB = -5V
⎯
300
I_C = -1mA, V_CE = -10V
⎯
300
⎯ I_C = -50mA, V_CE = -10V
15
⎯
I_C = -100mA, V_CE = -10V
⎯
-0.2
-0.5
V
I_C = -20mA, I_B = -2mA
I_C = -50mA, I_B = -10mA
⎯
-0.9
V
I_C = -50mA, V_CE = -10V
⎯
-0.9
V
I_C = -50mA, I_B = -10mA
⎯
8
pF V_CB = -20V, f = 1MHz
⎯
⎯
MHz
V_CE = -20V, I_C = -10mA,
f = 50MHz
110
⎯
1.5
⎯
ns V_CE = -100V, I_C = -50mA,
μs IB1 = -5mA, IB2 = 10mA
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%
FMMT560
Document Revision: 3
1 of 4
www.diodes.com
May 2009
© Diodes Incorporated