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| FMMT555TA Datasheet, PDF (1/2 Pages) Diodes Incorporated – SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 â AUGUST 2003
FEATURES
* 150 Volt VCEO
* 1 Amp continuous current
COMPLEMENTARY TYPE â FMMT455
PARTMARKING DETAIL â 555
FMMT555
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb = 25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
SOT23
VALUE
-160
-150
-5
-2
-1
-200
500
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-160
V
IC=-100 A
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-150
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-100 A
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
-0.1
A
-10
A
-0.1
A
-0.3
V
VCB =-140V
VCB =-140V, Tamb=100°C
VEB=-4V
IC=-100mA, IB=-10mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1
V
IC=-100mA, IB=-10mA*
Base-Emitter
Turn-on Voltage
VBE(on)
-1
V
IC=-100mA, VCE =-10V*
Static Forward Current
hFE
Transfer Ratio
Transition Frequency
fT
50
50
300
IC=-10mA, VCE =-10V*
IC=-300mA, VCE =-10V*
100
MHz
IC=-50mA, VCE =-10V
f=100MHz
Output Capacitance
Cobo
10
pF
VCB =-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 131
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