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| FMMT551_15 Datasheet, PDF (1/2 Pages) Diodes Incorporated – SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 60 Volt VCEO
* 1 Amp continuous current
FMMT551
E
C
COMPLEMENTARY TYPE Â FMMT451
B
PARTMARKING DETAIL Â 551
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Base Current
IB
-200
mA
Power Dissipation at Tamb=25°C
Ptot
500
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -80
V
IC=-100µA
Collector-Emitter
Sustaining Voltage
VCEO(sus) -60
V
IC=-10mA*
Emitter-Base Breakdown V(BR)EBO -5
Voltage
V
IE=-100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
-0.1
µA
-0.1
µA
-0.35 V
VCB=-60V
VEB=-4V
IC=-150mA, IB=-15mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.1
V
IC=-150mA, IB=-15mA*
Static Forward Current hFE
Transfer Ratio
Transition
fT
Frequency
50
150
10
IC=-150mA, VCE=-10V*
IC=-1A, VCE=-10V*
150
MHz IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
25
pF
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for this device
3 - 129
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