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| FMMT549 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTORS | |||
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SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 - OCTOBER 1995 7
FEATURES
* Low equivalent on-resistance; RCE(sat) 250m⦠at 1A
* 1 Amp continuous current
COMPLEMENTARY TYPES Â FMMT549 - FMMT449
FMMT549A - N/A
PARTMARKING DETAIL Â FMMT549 - 549
FMMT549A - 59A
FMMT549
FMMT549A
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-35
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Base Current
IB
-200
mA
Power Dissipation: at Tamb=25°C
Ptot
500
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
Cut-Off Currents
V(BR)CBO -35
V(BR)CEO -30
V(BR)EBO
-5
ICBO
V
V
V
-0.1 µA
-10 µA
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-30V
VCB=-30V, Tamb=100°C
Saturation Voltages
IEBO
VCE(sat)
FMMT549A
-0.1 µA
-0.25 -0.50 V
-0.50 -0.75 V
-0.30 V
VEB=-4V
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-100mA, IB=-1mA*
VBE(sat)
Base Emitter Turn-on Voltage VBE(on)
Static Forward Current
hFE
Transfer Ratio
FMMT549
FMMT549A
Transition Frequency
fT
-0.9 -1.25 V
IC=-1A, IB=-100mA*
-0.85 -1
V
IC=-1A, VCE=-2V*
70
200
80
130
40
80
IC=-50mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
100 160 300
IC=-500mA, VCE=-2V*
150 200 500
IC=-500mA, VCE=-2V*
100
MHz IC=-100mA, VCE=-5V
f=100MHz
Output Capacitance
Cobo
25
pF
Switching Times
ton
50
ns
toff
300
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
VCB=-10V, f=1MHz
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
3 - 127
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