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| FMMT489TA Datasheet, PDF (1/1 Pages) Diodes Incorporated – SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE3 - OCTOBER 1995
7
FEATURES
* Very low equivalent on-resistance; RCE(sat) 175m⦠at 1A
COMPLEMENTARY TYPE Â FMMT589
PARTMARKING DETAIL Â 489
FMMT489
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Pulse Current
ICM
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX.
50
V
30
V
5
V
1
A
4
A
200
mA
500
mW
-55 to +150
°C
UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V(BR)CBO 50
VCEO(sus) 30
V(BR)EBO
5
ICBO
ICES
IEBO
VCE(sat)
VBE(sat)
V
V
V
100
nA
100
nA
100
nA
0.3
V
0.6
V
1.1
V
IC=100µA
IC=10mA*
IE=100µA
VCB=30V
VCES=30V
VEB=4V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=1A, IB=100mA*
Base-Emitter
Turn On Voltage
VBE(on)
1.0
V
IC=1A, VCE=2V*
Static Forward Current
Transfer Ratio
Transition Frequency
hFE
100
100
300
60
20
IC=1mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=4A, VCE=2V*
fT
150
MHz
IC=50mA, VCE=10V
f=100MHz
Collector-Base
Cobo
Breakdown Voltage
10
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
For typical characteristics graphs see FMMT449 datasheet
3 - 114
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