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| FMMT458 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 â APRIL 2002
FEATURES
* 400 Volt VCEO
COMPLEMENTARY TYPE â FMMT558
PARTMARKING DETAIL â
458
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Pulse Current
ICM
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
400
Collector-Emitter
Breakdown Voltage
VCEO(sus)
400
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
Collector Cut-Off Current
ICBO
100
Collector Cut-Off Current
ICES
100
Emitter Cut-Off Current
IEBO
100
Collector-Emitter
VCE(sat)
0.2
Saturation Voltage
0.5
Base-Emitter
VBE(sat)
0.9
Saturation Voltage
Base-Emitter
VBE(on)
0.9
Turn On Voltage
Static Forward
Current Transfer Ratio
hFE
100
100
300
15
Transition Frequency
fT
50
Output Capacitance
Switching times
Cobo
ton
toff
5
135 Typical
2260 Typical
*Measured under pulsed conditions.
Spice parameter data is available upon request for this device
FMMT458
E
C
B
SOT23
VALUE
400
400
5
225
1
200
500
-55 to +150
UNIT
V
V
V
mA
A
mA
mW
°C
UNIT
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
ns
ns
CONDITIONS.
IC=100µA
IC=10mA*
IE=100µA
VCB=320V
VCE=320V
VEB=4V
IC=20mA, IB=2mA*
IC=50mA, IB=6mA*
IC=50mA, IB=5mA*
IC=50mA, VCE=10V*
IC=1mA, VCE=10V
IC=50mA, VCE=10V*
IC=100mA, VCE=10V*
IC=10mA, VCE=20V
f=20MHz
VCB=20V, f=1MHz
IC=50mA, VCC=100V
IB1=5mA, IB2=-10mA
TBA
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