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| FMMT455_15 Datasheet, PDF (1/2 Pages) Diodes Incorporated – SOT23 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR | |||
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SOT23 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 Â FEBRUARY 1996
FEATURES
* 140 Volt VCEO
* 1 Amp continuous current
* Ptot= 500 mW
PARTMARKING DETAIL Â 455
FMMT455
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT
Collector-Base
V(BR)CBO 160
V
Breakdown Voltage
Collector-Emitter
VCEO(sus) 140
V
Sustaining Voltage
Emitter-Base
V(BR)EBO 5
V
Breakdown Voltage
Collector Cut-Off Current ICBO
0.1
µA
SOT23
VALUE
160
140
5
2
1
200
500
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
CONDITIONS.
IC=100µA
IC=10mA*
IE=100µA
VCB=140V
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
IEBO
VCE(sat)
0.1
µA
VEB=4V
0.7
V
IC=150mA, IB=15mA
Static Forward Current hFE
Transfer Ratio
Transition
fT
Frequency
100
300
10 Typ
100
MHz
IC=150mA, VCE=10V*
IC=1A, VCE=10V*
IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
15
pF
VCB=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for this device
3 - 110
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