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| FMMT449_15 Datasheet, PDF (1/2 Pages) Diodes Incorporated – SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* Low equivalent on-resistance; RCE(sat) 250m⦠at 1A
COMPLEMENTARY TYPE Â FMMT549
PARTMARKING DETAIL Â 449
FMMT449
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
1
A
Base Current
IB
200
mA
Power Dissipation at Tamb= 25°C
Ptot
500
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 50
V
IC=1mA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 30
V
IC=10mA, IB=0*
Emitter-Base Breakdown V(BR)EBO 5
Voltage
V
IE=100µA, IC=0
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
VBE(sat)
0.1
µA
10
µA
0.1
µA
0.5
V
1.0
V
1.25 V
VCB=40V, IE=0
VCB=40V, Tamb=100°C
VEB=4V, IC=0
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=1A, IB=100mA*
Base-Emitter Turn-On
Voltage
VBE(on)
1.0
V
IC=1A, VCE=2V*
Static Forward Current hFE
Transfer Ratio
Transition
fT
Frequency
70
100
300
80
40
IC=50mA, VCE=2V*
IC=500mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
150
MHz IC=50mA, VCE=10V
f=100mHz
Output Capacitance
Cobo
15
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
3 - 106
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