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| FMMT415 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR AVALANCHE TRANSISTOR | |||
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SOT23 NPN SILICON PLANAR
AVALANCHE TRANSISTOR
ISSUE 4 - OCTOBER 1995
7
FEATURES
* Specifically designed for Avalanche mode operation
* 60A Peak Avalanche Current (Pulse width=20ns)
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
PARTMARKING DETAIL Â FMMT415 Â 415
FMMT417 Â 417
ABSOLUTE MAXIMUM RATINGS.
FMMT415
FMMT417
E
C
B
SOT23
PARAMETER
SYMBOL FMMT415 FMMT417 UNIT
Collector-Base Voltage
VCBO
260
320
V
Collector-Emitter Voltage
VCEO
100
100
V
Emitter-Base Voltage
VEBO
6
V
Continuous Collector Current
IC
500
mA
Peak Collector Current (Pulse Width=20ns)
ICM
60
A
Power Dissipation
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown
Voltage
FMMT415 V(BR)CES 260
FMMT417
320
Collector-Emitter Breakdown
Voltage
VCEO(sus) 100
V
IC=1mA
Tamb= -55 to +150°C
V
IC=1mA
V
IC=100µA
Emitter-Base Breakdown Voltage V(BR)EBO 6
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
IEBO
VCE(sat)
V
IE=10µA
0.1 µA VCB=180V
10
µA
VCB=180V,
Tamb=100°C
0.1 µA VEB=4V
0.5 V
IC=10mA, IB=1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9 V
IC=10mA, IB=1mA*
Current in Second Breakdown
ISB
15
(Pulsed)
25
Static Forward Current Transfer hFE
25
Ratio
A
VC=200V, CCE=620pF
A
VC=250V, CCE=620pF
IC=10mA, VCE=10V*
Transition Frequency
fT
40
MHz IC=10mA, VCE=20V
f=20MHz
Collector-Base Capacitance
Ccb
8
pF
VCB=20V, IE=0
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3 - 104
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