FMMT2222ATA Datasheet, PDF (1/2 Pages) Diodes Incorporated – SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS

SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS
FMMT2222
FMMT2222A
ISSUE 3 – FEBRUARY 1996
FEATURES
* Fast switching
PARTMARKING DETAILS
FMMT2222 – 1BZ
FMMT2222A – 1P
FMMT2222R – 2P
FMMT2222AR – 3P
COMPLEMENTARY TYPES
FMMT2222 – FMMT2907
FMMT2222A – FMMT2907A
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL FMMT2222 FMMT2222A UNIT
Collector-Base Voltage
V_CBO
60
75
V
Collector-Emitter Voltage
V_CEO
30
40
V
Emitter-Base Voltage
V_EBO
5
6
V
Continuous Collector Current
I_C
600
mA
Power Dissipation at T_amb=25°C
P_tot
330
mW
Operating and Storage Temperature Range T_j:T_stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
V_(BR)CBO 60
Breakdown Voltage
75
V
I_C=10µA, I_E=0
Collector-Emitter V_(BR)CEO 30
40
V
I_C=10mA, I_B=0
Breakdown Voltage
Emitter-Base
V_(BR)EBO
5
Breakdown Voltage
6
V
I_E=10µA, I_C=0
Collector Cut-Off I_CBO
Current
Emitter Cut-Off
I_EBO
Current
10
nA V_CB=50V, I_E=0
10 µA V_CB=60V, I_E=0
10
nA V_CB=50V, I_E=0, T_amb=150°C
10 µA V_CB=60V, I_E=0, T_amb=150°C
10
10 nA V_EB=3V, I_C=0
Collector-Emitter I_CEX
Cut-Off Current
10
10 nA V_CE=60V, V_EB(off)=3V
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
Ratio
V_CE(sat)
V_BE(sat)
h_FE
0.3
0.3 V
1.0
1.0 V
0.6 2.0 0.6 1.2 V
2.6
2.0 V
35
35
50
50
75
75
35
35
100 300 100 300
50
50
30
40
I_C=150mA, I_B=15mA*
I_C=500mA, I_B=50mA*
I_C=150mA, I_B=15mA*
I_C=500mA, I_B=50mA*
II^{CC==01.m1mA,AV,} _C^V_EC=^E1=01V0V*
I_C=10mA, V_CE=10V*
I_C=10mA, V_CE=10V, T_amb=-55°C
I_C=150mA, V_CE=10V*
I_C=150mA, V_CE=1V*
I_C=500mA, V_CE=10V*
*SMpieceaspuarreadmuentdererdpatualsiesdavcaoinladbitlieonusp.oPnurlesequweisdtthfo=r3t0h0isµsd.eDvuictey cycle ≤ 2%