FDB86135 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel Shielded Gate PowerTrench® MOSFET

FDB86135
N-Channel Shielded Gate PowerTrench^® MOSFET
100V, 176A, 3.5mΩ
May 2013
Features
• Shielded Gate MOSFET Technology
• Max R_DS(on) = 3.5mΩ at V_GS = 10V, I_D = 75A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
R_DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench^® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Applications
• DC-DC primary bridge
• DC-DC Synchronous rectification
• Hot swap
D
D
G
D²-PAK
G S _{FDB Series}
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Curren
- Continuous (Silicon Limited)
- Continuous( Package Limited)
- Continuous
- Pulsed
T_C = 25^oC
T_C = 25^oC
T_C = 25^oC(Note 1a)
E_AS
P_D
T_J, T_STG
Single Pulsed Avalanche Energy
Power Dissipation
- T_C = 25^oC
- T_A = 25^oC
Operating and Storage Temperature Range
(Note 3)
(Note 1a)
(Note 1b)
S
Ratings
100
±20
176
120
75
704
658
227
2.4
-55 to +175
Units
V
V
A
A
mJ
W
W/^oC
o_C
Thermal Characteristics
Symbol
Parameter
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDB86135
Device
FDB86135
Package
D2-PAK
(Note 1)
(Note 1a)
Ratings
0.66
62.5
Reel Size
330mm
Tape Width
24mm
Units
o_C/W
Quantity
800
©2011 Fairchild Semiconductor Corporation
1
FDB86135 Rev. C1
www.fairchildsemi.com