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FCX790A_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR | |||
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SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 3 - OCTOBER 2005
FEATURES
*
2W POWER DISSIPATION
*
6A Peak Pulse Current
*
Excellent HFE Characteristics
*
Low Saturation Voltages
FCX790A
C
Partmarking Detail -
790
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current **
Continuous Collector Current
Power Dissipation at Tamb=25°C
VCBO
VCEO
VEBO
ICM
IC
Ptot
-50
V
-40
V
-5
V
-6
A
-2
A
1â
W
2â¡
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
â recommended Ptot calculated using FR4 measuring 15x15x0.6mm
â¡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions when soldering surface mount components.
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