|
FCX690B Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON POWER (SWITCHING) TRANSISTOR | |||
|
SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - MARCH 1999
FEATURES
*
2W POWER DISSIPATION
*
6A Peak Pulse Current
*
Gain of 400 @IC=1Amp
*
Very Low Saturation Voltage
FCX690B
C
Complimentary Type -
Partmarking Detail -
FCX790A
690
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current **
Continuous Collector Current
Power Dissipation at Tamb=25°C
VCBO
VCEO
VEBO
ICM
IC
Ptot
45
V
45
V
5
V
6
A
2
A
1â
W
2â¡
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
â recommended Ptot calculated using FR4 measuring 15x15x0.6mm
â¡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
|
▷ |