FCX688B_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR

SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - NOVEMBER 1998
FEATURES
* 2W POWER DISSIPATION
*
10A Peak Pulse Current
*
Excellent H_FE Characteristics up to 10 Amps
*
Extremely Low Saturation Voltage
FCX688B
C
Complimentary Type -
Partmarking Detail -
FCX789A
688
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current **
Continuous Collector Current
Power Dissipation at T_amb=25°C
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_tot
12
V
12
V
5
V
10
A
3
A
1†
W
2‡
W
Operating and Storage Temperature Range
T_j:T_stg
-55 to +150
°C
† recommended Ptot calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.