FCX619 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON POWER (SWITCHING) TRANSISTOR

SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 6 - JANUARY 2003
FEATURES
* 2W POWER DISSIPATION
* 6A PEAK PULSE CURRENT
* EXCELLENT h_FE CHARACTERISTICS UP TO 6 Amps
* EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ.
* EXTREMELY LOW EQUIVALENT ON-RESISTANCE;
* R_CE(sat) 87mΩ at 2.75A
COMPLIMENTARY TYPE -
PARTMARKING DETAIL -
FCX720
619
FCX619
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current †
Base Current
Power Dissipation at T_amb=25°C
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
P_tot
50
V
50
V
5
V
6
A
3.0
A
500
mA
1.5†
W
2‡
Operating and Storage Temperature Range T_j:T_stg
-55 to +150
°C
† recommended Ptot calculated using FR4 measuring 25x25x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.