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FCX617 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON POWER (SWITCHING) TRANSISTOR | |||
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SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - NOVEMBER 1998
FEATURES
* 2W POWER DISSIPATION
*
12A Peak Pulse Current
*
Excellent HFE Characteristics up to 12 Amps
*
Extremely Low Saturation Voltage E.g. 8mv Typ.
*
Extremely Low Equivalent On-resistance;
RCE(sat) 50m⦠at 3A
Partmarking Detail -
617
FCX617
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current **
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
15
V
15
V
5
V
12
A
3
A
500
mA
1â
W
2â¡
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
â recommended Ptot calculated using FR4 measuring 15x15x0.6mm
â¡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
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