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| FCX589TA Datasheet, PDF (1/1 Pages) Diodes Incorporated – SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR | |||
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SOT89 PNP SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 3 - OCTOBER 1995
7
PARTMARKING DETAIL â P89
FCX589
C
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
-50
V
-30
V
-5
V
-2
A
-1
A
-200
mA
1
W
-65 to +150
°C
UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off Current
Collector -Emitter Cut-Off
Current
V(BR)CBO -50
V(BR)CEO -30
V(BR)EBO -5
ICBO
ICES
V
V
V
-100 nA
-100 nA
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-30V
VCES=-30V
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
IEBO
VCE(sat)
VBE(sat)
-100 nA
-0.35 V
-0.65
-1.2
V
VEB=-4V
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-1A, IB=-100mA*
Base-Emitter
Turn-on Voltage
VBE(on)
-1.1
V
IC=-1A, VCE=-2V*
Static Forward Current Transfer hFE
Ratio
Transition Frequency
fT
100
100
300
80
40
IC=-1mA, VCE=-2V*
IC=-500mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
100
MHz IC=-100mA, VCE=-5V
f=100MHz
Output Capacitance
Cobo
15
pF
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
For typical Characteristics graphs see FMMT549 datasheet
3 - 91
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