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| FCX558 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 â MARCH 1996
FEATURES
* 400 Volt VCEO
* Ptot= 1 Watt
FCX558
C
COMPLEMENTARY TYPE â FCX458
PARTMARKING DETAIL â P58
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-5
V
Continuous Collector Current
IC
-200
mA
Peak Pulse Current
ICM
-500
mA
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range
Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-400
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-400
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
ICBO ;ICES
IEBO
VCE(sat)
VBE(sat)
-100
nA
-100
nA
-0.2
V
-0.5
V
-0.9
V
VCB=-320V; VCES = 320V
VEB=-4V
IC=-20mA, IB=-2mA*
IC=-50mA, IB=-6mA*
IC=-50mA, IB=-5mA*
Base-Emitter
Turn On Voltage
VBE(on)
-0.9
V
IC=-50mA, VCE=-10V*
Static Forward Current
Transfer Ratio
Transition Frequency
hFE
100
100
300
15
IC=-1mA, VCE=-10V
IC=-50mA, VCE=-10V*
IC=-100mA, VCE=-10V*
fT
50
MHz
IC=-10mA, VCE=-20V
f=20MHz
Collector-Base
Breakdown Voltage
Cobo
5
pF
VCB=-20V, f=1MHz
Switching times
ton
95 Typical
ns
IC=-50mA, VC=-100V
toff
1600 Typical ns
IB1=-5mA, IB2=-10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FZT558 datasheet.
3 - 90
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