FCX495 Datasheet, PDF (1/6 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FCX495
SOT89 NPN silicon planar high voltage transistor
Features
• 150 Volt V_CEO
• 1 Amp continuous current
Device marking
N95
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Base current
Power dissipation at T_amb = 25°C
Operating and storage temperature range
E
C
C
B
Pinout - top view
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_tot
T_j:T_stg
Value
170
150
5
1
2
200
1
-65 to +150
Unit
V
V
V
A
A
mA
W
°C
Electrical characteristics (at T_amb = 25°C)
Parameter
Symbol Min.
Breakdown voltages
V_(BR)CBO 170
V_CEO(sus) 150
V_(BR)EBO
5
Collector cut-off currents
Emitter cut-off current
Emitter saturation voltages
I_CBO, I_CES
I_EBO
V_CE(sat)
V_BE(sat)
Base-emitter turn on voltage V_BE(on)
Static forward current transfer h_FE
100
ratio
100
50
10
Transition frequency
f_T
100
Max.
100
100
0.2
0.3
1.0
1.0
300
Unit
V
V
V
nA
nA
V
V
V
V
MHz
Collector-base breakdown voltage C_obo
10 pF
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300␮s. Duty cycle Յ2%
Conditions
I_C=100µA
I_C=10mA ^(*)
I_E=100µA
V_CB=150V, V_CE=150V
V_EB=4V
I_C=250mA, I_B=25mA^(*)
I_C=500mA, I_B=50mA^(*)
I_C=500mA, I_B=50mA^(*)
I_C=500mA, V_CE=10V^(*)
I_C=1mA, V_CE=10V
I_C=250mA, V_CE=10V^(*)
I_C=500mA, V_CE=10V^(*)
I_C=1A, V_CE=10V^(*)
I_C=50mA, V_CE=10V
f=100MHz
V_CB=10V, f=1MHz
Issue 4 - May 2007
1
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