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| FCX491 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
7
FEATURES
* 60 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt
FCX491
C
COMPLEMENTARY TYPE â FCX591
PARTMARKING DETAIL â N1
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
1
A
Peak Pulse Current
ICM
2
A
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range
Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX. UNIT
CONDITIONS.
Breakdown Voltages
Collector Cut-Off Currents
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V(BR)CBO
80
VCEO(sus)
60
V(BR)EBO
5
ICBO
ICES
IEBO
VCE(sat)
VBE(sat)
V
V
V
100
nA
100
nA
100
nA
0.25
V
0.50
V
1.1
V
IC=100µA
IC=10mA*
IE=100µA
VCB=60V,
VCE=60V
VEB=4V
IC=500mA, IB=50mA*
IC=1A, IB=100mA*
IC=1A, IB=100mA*
Base-Emitter
Turn On Voltage
VBE(on)
1.0
V
IC=1A, VCE=5V*
Static Forward Current
Transfer Ratio
Transition Frequency
hFE
100
100
300
80
30
IC=1mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
fT
150
MHz
IC=50mA, VCE=10V
f=100MHz
Collector-Base
Breakdown Voltage
Cobo
10
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
For typical Characteristics graphs see FMMT491 datasheet
3 - 86
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