 English |
|
|
|
|
|
|
|
| FCX458TA Datasheet, PDF (1/2 Pages) Diodes Incorporated – SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
| |||
|
SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 â OCTOBER 1995
FEATURES
* 400 Volt VCEO
* Ptot= 1 Watt
FCX458
C
COMPLEMENTARY TYPE â FCX558
PARTMARKING DETAIL â N58
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Pulse Current
ICM
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX.
Breakdown Voltages
V(BR)CBO
VCEO(sus)
400
400
VALUE
400
400
5
225
500
1
-65 to +150
UNIT
V
V
V
mA
mA
W
°C
UNIT
V
V
CONDITIONS.
IC=100µA
IC=10mA*
V(BR)EBO 5
V
IE=100µA
Collector Cut-Off Currents
ICBO
ICES
100
nA
100
nA
VCB=320V
VCE=320V
Emitter Cut-Off Current
IEBO
Emitter Saturation Voltages VCE(sat)
VBE(sat)
100
nA
0.2
V
0.5
V
0.9
V
VEB=4V
IC=20mA, IB=2mA*
IC=50mA, IB=6mA*
IC=50mA, IB=5mA*
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
VBE(on)
0.9
V
hFE
100
100
300
15
fT
50
MHz
Collector-Base
Breakdown Voltage
Cobo
5
pF
Switching times
ton
135 Typical
ns
toff
2260 Typical
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT458 datasheet
IC=50mA, VCE=10V*
IC=1mA, VCE=10V
IC=50mA, VCE=10V*
IC=100mA, VCE=10V**
IC=10mA, VCE=20V
f=20MHz
VCB=20V, f=1MHz
IC=50mA, VC=100V
IB1=5mA, IB2=-10mA
3 - 85
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese