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FCX1147A_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR | |||
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SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - DECEMBER 1998
FEATURES
* 2W POWER DISSIPATION
*
20A Peak Pulse Current
*
Excellent HFE Characteristics up to 20 Amps
*
Extremely Low Saturation Voltage E.g. 25mv Typ.
*
Extremely Low Equivalent On-resistance;
RCE(sat) 53m⦠at 3A
Complimentary Type -
Partmarking Detail -
FCX1047A
147
FCX1147A
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current **
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
-15
V
-12
V
-5
V
-20
A
-3
A
-500
mA
1â
W
2â¡
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
â recommended Ptot calculated using FR4 measuring 15x15x0.6mm
â¡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.
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