DZTA92_15 Datasheet, PDF (1/4 Pages) Diodes Incorporated – PNP SURFACE MOUNT TRANSISTOR

DZTA92
PNP SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DZTA42)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams (approximate)
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
3
2
1
4
SOT-223
3E
C4
2C
1B
TOP VIEW
COLLECTOR
2,4
1
BASE
3
EMITTER
Schematic and Pin Configuration
Symbol
V_CBO
V_CEO
V_EBO
I_B
I_C
Value
-300
-300
-5
-100
-500
Unit
V
V
V
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation @ T_A = 25°C (Note 3)
Thermal Resistance, Junction to Ambient @ T_A = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
1
125
-55 to +150
Unit
W
ο_C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V_(BR)CBO
-300
⎯
Collector-Emitter Breakdown Voltage
V_(BR)CEO
-300
⎯
Emitter-Base Breakdown Voltage
V_(BR)EBO
-5
⎯
Collector-Base Cut-Off Current
I_CBO
⎯
⎯
Emitter-Base Cut-Off Current
I_EBO
⎯
⎯
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
V_CE(SAT)
⎯
⎯
Base-Emitter Saturation Voltage
V_BE(SAT)
⎯
⎯
25
⎯
DC Current Gain
h_FE
40
⎯
25
⎯
SMALL SIGNAL CHARACTERISTICS
Gain-Bandwidth Product
f_T
50
⎯
Output Capacitance
C_obo
⎯
⎯
Max
⎯
⎯
⎯
-0.25
-0.1
-0.5
-0.9
⎯
⎯
⎯
⎯
6
Unit
V
V
V
μA
μA
V
V
V
MHz
pF
Test Conditions
I_C = -100μA, I_E = 0
I_C = -1mA, I_B = 0
I_E = -100μA, I_C = 0
V_CB = -200V, I_E = 0
V_EB = -3V, I_C = 0
I_C = -20mA, I_B = -2mA
I_C = -20mA, I_B = -2mA
I_C = -1mA, V_CE = -10V
I_C = -10mA, V_CE = -10V
I_C = -30mA, V_CE = -10V
I_C = -10mA, V_CE = -20V, f = 100MHz
V_CB = -20V, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1“ x 0.85” x 0.052”; pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d< = 2%
DS30521 Rev. 4 - 2
1 of 4
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DZTA92
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