DZTA42 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SURFACE MOUNT TRANSISTOR

DZTA42
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DZTA92)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams (approximate)
3
2
1
4
3E
SOT-223
COLLECTOR
2,4
C4
2C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
300
300
6
500
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation at @T_A = 25°C (Note 3)
Thermal Resistance, Junction to Ambient @T_A = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Symbol Min Typ Max Unit
Test Conditions
V_(BR)CBO 300
⎯
⎯
V I_C = 100μA, I_E = 0
V_(BR)CEO 300
⎯
⎯
V I_C = 1mA, I_B = 0
V_(BR)EBO
6
⎯
⎯
V I_E = 100μA, I_C = 0
I_CBO
⎯
⎯
0.1
μA V_CB = 200V, I_E = 0
I_EBO
⎯
⎯
0.1
μA V_EB = 6V, I_C = 0
V_CE(SAT) ⎯
V_BE(SAT) ⎯
25
h_FE
40
40
⎯ 0.5
⎯ 0.9
⎯
⎯
⎯
⎯
⎯
⎯
V I_C = 20mA, I_B = 2mA
V I_C = 20mA, I_B = 2mA
I_C = 1mA, V_CE = 10V
⎯ I_C = 10mA, V_CE = 10V
I_C = 30mA, V_CE = 10V
f_T
50
⎯
⎯ MHz I_C = 10mA, V_CE = 20V, f = 100MHz
C_obo
⎯
⎯
3
pF V_CB = 20V, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1” x 0.85” x 0.052”; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse Test: Pulse width = 300μs, Duty Cycle ≤ 2%
DS30582 Rev. 5 - 2
1 of 4
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DZTA42
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