DZT658 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SURFACE MOUNT TRANSISTOR

DZT658
Features
NPN SURFACE MOUNT TRANSISTOR
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• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams
3
2
1
4
SOT-223
3E
COLLECTOR
2,4
C4
2C
BASE 1
1B
TOP VIEW
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
Value
400
400
5
0.5
1
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation @T_A = 25°C (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3) @T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Off Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
On Characteristics (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
AC Characteristics
Transition Frequency
Output Capacitance
Switching Times
Symbol Min
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
400
400
5
⎯
⎯
⎯
V_CE(SAT)
⎯
⎯
V_BE(SAT)
⎯
V_BE(ON)
⎯
50
h_FE
50
40
f_T
50
C_obo
⎯
t_on
⎯
t_off
⎯
Typ
⎯
⎯
⎯
⎯
⎯
0.075
0.06
0.08
⎯
⎯
110
100
85
⎯
⎯
138
175
Max
⎯
⎯
⎯
100
100
0.3
0.25
0.5
0.9
1
⎯
⎯
⎯
⎯
10
⎯
⎯
Unit Test Condition
V I_C = 100μA, I_E = 0
V I_C = 10mA, I_B = 0
V I_E = 100μA, I_C = 0
nA V_CB = 320V, I_E = 0
nA V_EB = 4V, I_C = 0
V IC = 20mA, IB = 1mA
V I_C = 50mA, I_B = 5mA
V _{IC = 100mA, IB = 10mA}
V I_C = 100mA, I_B = 10mA
V V_CE = 5V, I_C = 100mA
V_CE = 5V, I_C = 1mA
⎯ V_CE = 5V, I_C = 100mA
V_CE = 10V, I_C = 200mA
MHz
pF
ns
ns
V_CE = 20V, I_C = 30mA, f = 30MHz
V_CB = 20V, f = 1MHz
V_CC = 100V, I_C = 100mA
I_B1 = 10mA, I_B2 = -20mA
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 3 or in Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
DS31308 Rev. 2 - 2
1 of 3
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DZT658
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