DZT591C Datasheet, PDF (1/4 Pages) Diodes Incorporated – PNP SURFACE MOUNT TRANSISTOR

DZT591C
PNP SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DZT491)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 3)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams (approximate)
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Continuous Current (Note 3)
Peak Collector Current
Base Current
Power Dissipation (Note 3)
Operating and Storage Temperature Range
3
2
1
4
SOT-223
3E
COLLECTOR
2,4
C4
2C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_d
T_j, T_STG
Value
-80
-60
-5
-1
-2
-200
1
-55 to +150
Unit
V
V
V
A
A
mA
W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Symbol Min Typ Max Unit
Test Conditions
I_CBO
⎯ ⎯ -100 nA V_CB = -60V
I_EBO
⎯ ⎯ -100 nA V_EB = -4V
I_CES
⎯ ⎯ -100 nA V_CES = -60V
V_(BR)CBO -80 ⎯
⎯
V I_C = 100μA
V_(BR)CEO -60 ⎯
⎯
V I_C = 10mA
V_(BR)EBO -5
⎯
⎯
V I_E = 100μA
V_CE(SAT)
⎯
⎯
⎯
⎯
-0.3
-0.6
V I_C = -500mA, I_B = -50mA
V I_C = -1A, I_B = -100mA
100 ⎯
⎯
⎯ V_CE = -5V, I_C = -1mA
h_FE
100 ⎯ 300 ⎯ V_CE = -5V, I_C = -500mA
80 ⎯
⎯
⎯ V_CE = -5V, I_C = -1A
15 ⎯
⎯
⎯ V_CE = -5V, I_C = -2A
V_BE(SAT) ⎯ ⎯ -1.2 V I_C = -1A, I_B = -100mA
V_BE(on)
⎯
⎯
-1
V I_C = -1A, V_CE = -5V
f_T
C_obo
150 ⎯
⎯ 13
⎯ MHz V_CE = -10V, I_C = -50mA, f = 100MHz
⎯ pF V_CB = -10V, f =1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300ms. Duty cycle ≤ 2%.
DS31127 Rev. 2 - 2
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DZT591C
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