DZT5551 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SURFACE MOUNT TRANSISTOR

DZT5551
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DZT5401)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 3)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.112 grams (approximate)
3
2
1
4
SOT-223
3E
COLLECTOR
2,4
C4
2C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
180
160
6.0
600
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation @T_A = 25°C (Note 3)
Thermal Resistance, Junction to Ambient @T_A = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_j, T_STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(SAT)
V_BE(SAT)
Min
180
160
6.0
⎯
⎯
80
80
30
⎯
⎯
C_obo
⎯
h_fe
50
f_T
100
NF
⎯
Max
⎯
⎯
⎯
50
50
⎯
250
⎯
0.15
0.20
1.0
6.0
200
300
8.0
Unit
Test Condition
V I_C = 100μA, I_E = 0
V I_C = 1.0mA, I_B = 0
V I_E = 10μA, I_C = 0
nA V_CB = 120V, I_E = 0
μA V_CB = 120V, I_E = 0, T_A = 100°C
nA V_EB = 4.0V, I_C = 0
I_C = 1.0mA, V_CE = 5.0V
⎯ I_C = 10mA, V_CE = 5.0V
I_C = 50mA, V_CE = 5.0V
V ^{IC = 10mA, IB = 1.0mA}
I_C = 50mA, I_B = 5.0mA
V ^{IC = 10mA, IB = 1.0mA}
I_C = 50mA, I_B = 5.0mA
pF
⎯
MHz
dB
V_CB = 10V, f = 1.0MHz, I_E = 0
V_CE = 10V, I_C = 1.0mA, f = 1.0kHz
V_CE = 10V, I_C = 10mA, f = 100MHz
V_CE = 5.0V, I_C = 200μA, R_S = 1.0kΩ, f = 1.0kHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
DS31219 Rev. 2 – 2
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DZT5551
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