DZT491 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SURFACE MOUNT TRANSISTOR

DZT491
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DZT591C)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams (approximate)
3
2
1
4
SOT-223
3E
COLLECTOR
2,4
C4
2C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Continuous Current (Note 3)
Peak Collector Current
Base Current
Power Dissipation (Note 3)
Operating and Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_d
T_j, T_STG
Value
80
60
5
1
2
200
1
-55 to +150
Unit
V
V
V
A
A
mA
W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Symbol Min Typ Max
I_CBO
⎯ ⎯ 100
I_EBO
⎯ ⎯ 100
I_CES
⎯ ⎯ 100
V_(BR)CBO 80
⎯
⎯
V_(BR)CEO 60
⎯
⎯
V_(BR)EBO 5
⎯
⎯
V_CE(SAT)
⎯
⎯
⎯
⎯
100 ⎯
h_FE
100 ⎯
80 ⎯
30 ⎯
V_BE(SAT) ⎯
⎯
V_BE(on)
⎯
⎯
0.25
0.5
⎯
300
⎯
⎯
1.1
1
f_T
150 ⎯ ⎯
C_obo
⎯⎯
10
Unit
Test Conditions
nA V_CB = 60V
nA V_EB = 4V
nA V_CES = 60V
V I_C = 100μA
V I_C = 10mA
V I_E = 100μA
V I_C = 500mA, I_B = 50mA
V I_C = 1A, I_B = 100mA
⎯ V_CE = 5V, I_C = 1mA
⎯ V_CE = 5V, I_C = 500mA
⎯ V_CE = 5V, I_C = 1A
⎯ V_CE = 5V, I_C = 2A
V I_C = 1A, I_B = 100mA
V I_C = 1A, V_CE = 5V
MHz V_CE = 10V, I_C = 50mA, f = 100MHz
pF V_CB = 10V, I_E = 0A, f =1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300ms duty cycle ≤ 2%
DS30946 Rev. 3 - 2
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DZT491
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