DZT3150_1 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SURFACE MOUNT TRANSISTOR

DZT3150
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams (approximate)
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
3
2
1
4
SOT-223
COLLECTOR
3E
2,4
C4
2C
1B
TOP VIEW
BASE 1
3
EMITTER
Schematic and Pin Configuration
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_D
R_θJA
T_j, T_STG
Value
50
25
7.0
5.0
1.0
1 (Note 3)
2 (Note 4)
125 (Note 3)
62.5 (Note 4)
-55 to +150
Unit
V
V
V
A
A
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Symbol Min Typ Max Unit
Test Condition
V_(BR)CEO 25
⎯
⎯
V I_C = 10mA, I_B = 0
I_CBO
⎯
⎯
1.0
μA V_CB = 50V, I_E = 0
I_EBO
⎯
⎯
1.0
μA V_EB = 7.0V, I_C = 0
V_CE(SAT) ⎯
⎯
0.35
0.50
V IC = 3.0A, IB = 150mA
V _{IC = 4.0A, IB = 200mA}
V_BE(SAT) ⎯
⎯
1.10
1.40
V IC = 3.0A, IB = 150mA
V _{IC = 4.0A, IB = 200mA}
250
500
I_C = 500mA, V_CE = 2.0V
h_FE
150
⎯
⎯
⎯ I_C = 2.0A, V_CE = 2.0V
50
⎯
I_C = 5.0A, V_CE = 2.0V
f_T
⎯
150
⎯
MHz ^{IC = 50mA, VCE = 6.0V,}
f = 200MHz
C_obo
⎯
⎯
50
pF V_CB = 10V, I_E = 0, f = 1MHz
Note:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 3.
4. Device mounted on Polyimide PCB with a copper area of 1.8cm^2.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%
DS30785 Rev. 4 - 2
1 of 4
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DZT3150
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