DXTA92 Datasheet, PDF (1/4 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

DXTA92
PNP SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DXTA42)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
SOT89-3L
COLLECTOR
3E
2,4
C4
2C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
-300
-300
-5
-500
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T_A = 25°C
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_j, T_STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cut-off Current
Emitter-Base Cut-off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Static Forward Current Transfer Ratio
SMALL SIGNAL CHARACTERISTICS
Gain-Bandwidth Product
Output Capacitance
Symbol Min
Typ
Max Unit
Test Conditions
V_(BR)CBO -300
⎯
⎯
V I_C = -100μA, I_E = 0
V_(BR)CEO -300
⎯
⎯
V I_C = -1mA, I_B = 0
V_(BR)EBO
-5
⎯
⎯
V I_E = -100μA, I_C = 0
I_CBO
⎯
⎯
-0.25
μA _{VCB = -200V, IE = 0}
I_EBO
⎯
⎯
-0.1
μA V_EB = -3V, I_C = 0A
V_CE(SAT)
⎯
V_BE(SAT)
⎯
25
h_FE
40
25
⎯
-0.5
V I_C = -20mA, I_B = -2mA
⎯
-0.9
V I_C = -20mA, I_B = -2mA
⎯
⎯
I_C = -1mA, V_CE = -10V
⎯
⎯
V I_C = -10mA, V_CE = -10V
⎯
⎯
I_C = -30mA, V_CE = -10V
f_T
50
⎯
⎯
MHz
I_C = -10mA, V_CE = -20V,
f = 100MHz
C_obo
⎯
⎯
6
pF V_CB = -20V, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31159 Rev. 4 - 2
1 of 4
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DXTA92
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