DXTA42_15 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SURFACE MOUNT TRANSISTOR

DXTA42
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DXTA92)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
NPN SURFACE MOUNT TRANSISTOR
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Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 54.8mg (approximate)
3E
COLLECTOR
2,4
Top View
C4
2C
1B
TOP VIEW
Device Schematic
1
BASE
3
EMITTER
Pin Out Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
300
300
6
500
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T_A = 25°C
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Static Forward Current Transfer Ratio
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Symbol Min
Typ
Max Unit
Test Conditions
V_(BR)CBO
300
⎯
⎯
V I_C = 100μA, I_E = 0
V_(BR)CEO
300
⎯
⎯
V I_C = 1mA, I_B = 0
V_(BR)EBO
6
⎯
⎯
V I_E = 100μA, I_C = 0
I_CBO
⎯
⎯
0.1
μA V_CB = 200V, I_E = 0
I_EBO
⎯
⎯
0.1
μA V_EB = 6V, I_C = 0
V_CE(SAT)
⎯
⎯
0.5
V I_C = 20mA, I_B = 2mA
V_BE(SAT)
⎯
⎯
0.9
V I_C = 20mA, I_B = 2mA
25
I_C = 1mA, V_CE = 10V
h_FE
40
⎯
⎯
⎯ I_C = 10mA, V_CE = 10V
40
I_C = 30mA, V_CE = 10V
f_T
50
⎯
⎯
MHz
I_C = 10mA, V_CE = 20V,
f = 100MHz
C_obo
⎯
⎯
3
pF V_CB = 20V, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
DXTA42
Document number: DS31158 Rev. 4 - 2
1 of 4
www.diodes.com
December 2009
© Diodes Incorporated