DXT3150 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SURFACE MOUNT TRANSISTOR

DXT3150
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
SOT89-3L
COLLECTOR
3E
2,4
C4
2C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
50
25
7
5
Unit
V
V
V
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T_A = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_j, T_STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
ON CHARACTERISTICS (Note 4)
Symbol Min
Typ
V_(BR)CEO
25
⎯
I_CBO
⎯
⎯
I_EBO
⎯
⎯
Collector-Emitter Saturation Voltage
V_CE(SAT)
⎯
⎯
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
V_BE(SAT)
⎯
⎯
250
h_FE
150
⎯
50
f_T
⎯
220
C_obo
⎯
⎯
Max
⎯
1.0
1.0
0.35
0.50
1.10
1.40
550
⎯
⎯
⎯
50
Unit
Test Conditions
V I_C = 10mA, I_B = 0
μA V_CB = 50V, I_E = 0
μA V_EB = 7.0V, I_C = 0
V ^{IC = 3.0A, IB = 150mA}
I_C = 4.0A, I_B = 200mA
V ^{IC = 3.0A, IB = 150mA}
I_C = 4.0A, I_B = 200mA
I_C = 500mA, V_CE = 2.0V
⎯ I_C = 2.0A, V_CE = 2.0V
I_C = 5.0A, V_CE = 2.0V
MHz ^{IC = 50mA, VCE = 6.0V,}
f = 100MHz
pF V_CB = 10V, I_E = 0, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 3 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31157 Rev. 3 - 2
1 of 3
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DXT3150
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