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DPLS315E Datasheet, PDF (1/4 Pages) Diodes Incorporated – LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR | |||
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Features
⢠Epitaxial Planar Die Construction
⢠Low Collector-Emitter Saturation Resistance RCE(SAT) = 70mΩ at 3A
⢠High DC Current Gain hFE > 300 at IC = 2A
⢠Complementary NPN Type Available (DNLS412E)
⢠Ideally Suited for Automated Assembly Processes
⢠Ideal for Medium Power Switching or Amplification Applications
⢠Lead Free By Design/RoHS Compliant (Note 1)
⢠âGreenâ Device (Note 2)
Mechanical Data
⢠Case: SOT-223
⢠Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020D
⢠Terminals: Finish â Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
⢠Marking Information: See Page 3
⢠Ordering Information: See Page 3
⢠Weight: 0.112 grams (approximate)
DPLS315E
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
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SOT-223
3E
COLLECTOR
2,4
C4
2C
BASE 1
1B
TOP VIEW
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
-15
-15
-5
-3
-8
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation @ TA = 25°C (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 1) @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
DS31325 Rev. 3 - 2
1 of 4
www.diodes.com
DPLS315E
© Diodes Incorporated
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