DP0150ALP4 Datasheet, PDF (1/4 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Die Construction
• Ultra-Small Leadless Surface Mount Package
• Ultra-low Profile (0.40mm max)
• Complementary NPN Type Available (DN0150ALP4 /
DN0150BLP4)
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q 101 Standards for High Reliability
DP0150ALP4 / DP0150BLP4
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Please click here to visit our online spice models database.
Mechanical Data
• Case: DFN1006H4-3
• Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections Indicator: Collector Dot
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Ordering Information: See Page 3
• Marking Information: See Page 3
• Weight: 0.0008 grams (approximate)
Bottom View
1
3E
C
2_B
Top View
Device Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
Value
-50
-50
-5
-100
-200
-30
Unit
V
V
V
mA
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
450
278
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Symbol Min
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V(_BR)CBO
-50
Collector-Emitter Breakdown Voltage (Note 4)
V(_BR)CEO
-50
Emitter-Base Breakdown Voltage
V(_BR)EBO
-5
Collector Cut-Off Current
I_CBO
—
Emitter Cut-Off Current
I_EBO
—
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
V_CE(SAT)
—
DP01510ALP4
DP01510BLP4
h_FE
120
200
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f_T
80
Output Capactiance
C_ob
—
Typ
—
—
—
—
—
-0.15
—
—
—
1.6
Max
—
—
—
-0.1
-0.1
-0.3
240
400
—
—
Unit
Test Condition
V I_C = -10μA, I_E = 0
V I_C = -1mA, I_B = 0
V I_E = -10μA, I_C = 0
μA V_CB = -50V, I_E = 0
μA V_EB = -5V, I_C = 0
V I_C = -100mA, I_B = -10mA
— V_CE = -6V, I_C = -2mA
MHz
pF
V_CE = -10V, I_E = 1mA
f = 30MHz
V_CB = -10V, I_E = 0,
f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%
DP0150ALP4 / DP0150BLP4
Document number: DS31493 Rev. 3 - 2
1 of 4
www.diodes.com
July 2009
© Diodes Incorporated